Title :
A high-speed low-power Hi-CMOS 4K static RAM
Author :
Minato, Osamu ; Masuhara, Toshiaki ; Sasaki, Toshio ; Sakai, Yoshio ; Kubo, Masaharu ; Uchibori, K. ; Yasui, T.
Author_Institution :
Hitachi Central Research Laboratory, Tokyo, Japan
fDate :
6/1/1979 12:00:00 AM
Abstract :
A high-speed low-power CMOS fully static, 4096 word by 1 bit random-access memory (RAM) has been developed, which contains a bipolar-CMOS (BCMOS) circuit on the same chip. The device is realized using low-power-oriented circuit design and high-performance CMOS technology utilizing 3-µm gate length. The fabricated 4K static RAM has an address access time of 43 ns and a power dissipation of 80 mW.
Keywords :
CMOS logic circuits; CMOS memory circuits; CMOS technology; Circuit synthesis; MOS devices; Power dissipation; Random access memory; Read-write memory; Switching circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19513
