Title :
High-Brightness Quantum Well Tapered Lasers
Author :
Sumpf, Bernd ; Hasler, Karl-Heinz ; Adamiec, Pawel ; Bugge, Frank ; Dittmar, Frank ; Fricke, Jörg ; Wenzel, Hans ; Zorn, Martin ; Erbert, Götz ; Trankle, Gunther
Author_Institution :
Dept. of Optoelectron., Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
Abstract :
High-power quantum well lasers with high brightness in the spectral range between 650 nm and 1080 nm will be presented. Improved layer structures with a narrow vertical far-field divergence down to angles of 15deg (full-width at half-maximum) were developed. For these layer structures, optimized tapered lasers were processed to achieve laterally a nearly diffraction-limited beam quality with beam propagation factors smaller than 2. Depending on the emission wavelength, the tapered devices reach an output power up to 12 W and a brightness of 1 GWmiddotcm-2middotsr-1.
Keywords :
brightness; laser beams; quantum well lasers; beam propagation factor; diffraction-limited beam quality; emission wavelength; high-brightness quantum well tapered laser; high-power quantum well laser; narrow vertical far-field divergence; optimized tapered laser; wavelength 650 nm to 1080 nm; Diode lasers; Fiber lasers; Laser beams; Optical feedback; Power amplifiers; Power generation; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Lasers; semiconductor lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2008.2010952