DocumentCode
1064184
Title
New silicon epitaxial avalanche diode for single-photon timing at room temperature
Author
Ghioni, M. ; Cova, S. ; Lacaita, A. ; Ripamonti, G.
Author_Institution
Dipartimento di Elettronica, Politecnico di Milano, Italy
Volume
24
Issue
24
fYear
1988
fDate
11/24/1988 12:00:00 AM
Firstpage
1476
Lastpage
1477
Abstract
A new silicon single-photon avalanche diode (SPAD) with epitaxial structure is presented. The carrier diffusion effect, which has plagued the time response of previous SPADs, is strongly reduced. The resolution obtained, less than 30 ps full width at half-maximum, is the highest so far reported in single-photon timing
Keywords
avalanche photodiodes; elemental semiconductors; silicon; SPADs; Si; carrier diffusion effect; epitaxial structure; resolution; single-photon avalanche diode; single-photon timing; time response;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
27911
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