Title :
New silicon epitaxial avalanche diode for single-photon timing at room temperature
Author :
Ghioni, M. ; Cova, S. ; Lacaita, A. ; Ripamonti, G.
Author_Institution :
Dipartimento di Elettronica, Politecnico di Milano, Italy
fDate :
11/24/1988 12:00:00 AM
Abstract :
A new silicon single-photon avalanche diode (SPAD) with epitaxial structure is presented. The carrier diffusion effect, which has plagued the time response of previous SPADs, is strongly reduced. The resolution obtained, less than 30 ps full width at half-maximum, is the highest so far reported in single-photon timing
Keywords :
avalanche photodiodes; elemental semiconductors; silicon; SPADs; Si; carrier diffusion effect; epitaxial structure; resolution; single-photon avalanche diode; single-photon timing; time response;
Journal_Title :
Electronics Letters
