Comparison of undoped and doped high resistivity CdTe and (Cd,Zn)Te detector Crystals

Author

Fiederle, M. ; Fauler, A. ; Konrath, J. ; Babentsov, V. ; Franc, J. ; James, R.B.

Author_Institution

Freiburger Materialforschungszentrum, Albert-Ludwigs-Univ. Freiburg, Germany

Volume

51

Issue

4

fYear

2004

Firstpage

1864

Lastpage

1868

Abstract

CdTe and (Cd,Zn)Te crystals were grown to study the compensation mechanism and the influence on the transport properties. Undoped and doped crystals with Sn, In, and Ge were grown. The crystals showed resistivities up to 10⁹ Ωcm and higher. The transport properties depended strongly on the dopant and the compensation mechanism. For the doping with a deep donor, the mobility-lifetime product of electrons were 2×10^-5 cm/V and 4×10^-4 mcm²/V for Ge and Sn doped, respectively. The highest values were obtained for In doped (Cd,Zn)Te with 3.3×10^-3 cm²/V.

Keywords

crystal growth; deep levels; doping profiles; electrical resistivity; electron mobility; germanium; impurity states; indium; semiconductor counters; tin; (Cd,Zn)Te detector; CdTe detector; Ge; In; Sn; compensation mechanism; crystal growth; deep donors; dopant dependence; doped crystal; electron; high resistivity crystal; mobility-lifetime product; radiation detector; transport properties; undoped crystal; Cadmium; Conductivity; Crystalline materials; Crystals; Detectors; Doping; Mechanical factors; Semiconductor process modeling; Tellurium; Tin;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.832958

Filename

1323783