Title :
Waveguide integrated MSM photodetector on InP
Author :
Soole, J.B.D. ; Schumacher, Hermann ; Esagui, R. ; Koza, M.A. ; Bhat, Ritesh
Author_Institution :
Bellcore, Red Bank, NJ
fDate :
11/24/1988 12:00:00 AM
Abstract :
An interdigitated metal-semiconductor-metal Schottky barrier photodetector monolithically integrated with a ridge waveguide and suitable for the 1.3-1.6 μm wavelength range is reported. The GaInAs detector on top of a GaInAsP (Λg=1.2 μm) guide used a 35 nm layer of GaAs to enhance the Schottky barrier. Internal quantum efficiencies of around 80% and a pulse response of 147 ps (FWHM) were obtained
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; photodetectors; 1.3 to 1.6 micron; 147 ps; GaInAs-GaInAsP; integrated MSM photodetector; metal-semiconductor-metal Schottky barrier photodetector; pulse response; quantum efficiencies; ridge waveguide;
Journal_Title :
Electronics Letters
