• DocumentCode
    1064258
  • Title

    Waveguide integrated MSM photodetector on InP

  • Author

    Soole, J.B.D. ; Schumacher, Hermann ; Esagui, R. ; Koza, M.A. ; Bhat, Ritesh

  • Author_Institution
    Bellcore, Red Bank, NJ
  • Volume
    24
  • Issue
    24
  • fYear
    1988
  • fDate
    11/24/1988 12:00:00 AM
  • Firstpage
    1478
  • Lastpage
    1480
  • Abstract
    An interdigitated metal-semiconductor-metal Schottky barrier photodetector monolithically integrated with a ridge waveguide and suitable for the 1.3-1.6 μm wavelength range is reported. The GaInAs detector on top of a GaInAsP (Λg=1.2 μm) guide used a 35 nm layer of GaAs to enhance the Schottky barrier. Internal quantum efficiencies of around 80% and a pulse response of 147 ps (FWHM) were obtained
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; photodetectors; 1.3 to 1.6 micron; 147 ps; GaInAs-GaInAsP; integrated MSM photodetector; metal-semiconductor-metal Schottky barrier photodetector; pulse response; quantum efficiencies; ridge waveguide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    27913
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1064258