Title :
Two-dimensional semiconductor analysis using finite-element method
Author :
Adachi, Tohru ; Yoshii, Akira ; Sudo, Tsuneta
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
fDate :
7/1/1979 12:00:00 AM
Abstract :
Two-dimensional simulation of semiconductor devices using a finite-element formulation is described. In the present analysis, Poisson´s equation is solved by a finite-element method, based on the variational principle, and current continuity equations are solved by a method of weighted residuals. The advantage of this method is mentioned. In order to demonstrate the validity of this method, a bipolar n-p-n transistor is analyzed, considering the generation-recombination term. Not only voltage-current characteristic, but also junction capacitance and cutoff frequency are calculated. Then transistor behavior under inverse mode by using the n-type buried layer as a common emitter is discussed.
Keywords :
Analytical models; Capacitance; Cutoff frequency; Electromagnetic waveguides; Finite element methods; Geometry; Large-scale systems; Poisson equations; Semiconductor devices; Transmission line matrix methods;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19540