• DocumentCode
    1064351
  • Title

    Frequency increase in pulsed avalanche diodes

  • Author

    Statz, Hermann ; Wallace, Roger N.

  • Author_Institution
    Raytheon Research Division, Waltham, MA
  • Volume
    26
  • Issue
    7
  • fYear
    1979
  • fDate
    7/1/1979 12:00:00 AM
  • Firstpage
    1064
  • Lastpage
    1067
  • Abstract
    We have tested many GaAs IMPATT diodes under high power pulsed conditions and found that the best power output and efficiency occur at higher frequencies in the pulsed mode than in the CW mode. This phenomenon can be understood by considering the effect on the avalanche region field produced by the space charge of the carriers injected into the drift zone. Qualitative agreement is demonstrated between theory and experiment.
  • Keywords
    Circuit testing; Diodes; Doping profiles; Electron multipliers; Electron traps; Frequency; Gallium arsenide; Gases; Oscillators; Space charge;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19546
  • Filename
    1480124
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1064351