Title :
Efficient, High-Data-Rate, Tapered Oxide-Aperture Vertical-Cavity Surface-Emitting Lasers
Author :
Chang, Yu-Chia ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA
Abstract :
New advances in high-efficiency, high-speed 980-nm vertical-cavity surface-emitting lasers (VCSELs) are presented. The tapered oxide aperture was optimized to provide additional mode confinement without sacrificing its static low-loss performance. The pad capacitance was reduced by using benzocyclobutene, removing the n-contact layer, and shrinking the pad dimension. The mesa capacitance was also lowered by using a thicker oxide aperture and deep oxidation layers. With all these improvements, our devices demonstrated >20 GHz bandwidth, the highest for 980 nm VCSELs, and 35 Gb/s operation at only 10 mW power dissipation, corresponding to the highest reported data rate/power dissipation ratio of 3.5 Gb/(smiddotmW).
Keywords :
high-speed optical techniques; laser cavity resonators; oxidation; semiconductor lasers; surface emitting lasers; benzocyclobutene; bit rate 35 Gbit/s; deep oxidation layer; high-data rate; high-speed vertical-cavity surface-emitting laser; power 10 mW; tapered oxide-aperture; wavelength 980 nm; Apertures; Bandwidth; Capacitance; Laser modes; Optical surface waves; Oxidation; Power dissipation; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Optical interconnects; optical modulation; oxidation; semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs);
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2008.2010955
