DocumentCode
1064411
Title
Relation between oxide thickness and the breakdown voltage of a planar junction with field relief electrode
Author
O´Neil, V.P. ; Alonas, Paul G.
Author_Institution
Motorola Semiconductor Products, Inc., Phoenix, AZ
Volume
26
Issue
7
fYear
1979
fDate
7/1/1979 12:00:00 AM
Firstpage
1098
Lastpage
1100
Abstract
A semitheoretical relationship has been developed between the surface breakdown of a planar junction protected by an overlaying field plate and its description in terms of resistivity and oxide thickness. This has been confirmed experimentally on p+-n diodes in 45-Ω . cm material for a wide range of oxide thicknesses.
Keywords
Breakdown voltage; Conductivity; Dielectrics; Electric breakdown; Electrodes; P-n junctions; Permittivity; Protection; Semiconductor diodes; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19552
Filename
1480130
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