Title :
Relation between oxide thickness and the breakdown voltage of a planar junction with field relief electrode
Author :
O´Neil, V.P. ; Alonas, Paul G.
Author_Institution :
Motorola Semiconductor Products, Inc., Phoenix, AZ
fDate :
7/1/1979 12:00:00 AM
Abstract :
A semitheoretical relationship has been developed between the surface breakdown of a planar junction protected by an overlaying field plate and its description in terms of resistivity and oxide thickness. This has been confirmed experimentally on p+-n diodes in 45-Ω . cm material for a wide range of oxide thicknesses.
Keywords :
Breakdown voltage; Conductivity; Dielectrics; Electric breakdown; Electrodes; P-n junctions; Permittivity; Protection; Semiconductor diodes; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19552
