Narrow linewidth and low chirping characteristics in high power operating butt-jointed DBR lasers grown by MOVPE

Author

Tohmori, Y. ; Kano, F. ; Oishi, Masayuki ; Kondo, Yuta ; Nakao, Masahiro ; Oe, Katsutoshi

Author_Institution

NTT Opto-Electron. Labs., Kanagawa

Volume

Issue

fYear

1988

fDate

11/24/1988 12:00:00 AM

Firstpage

1481

Lastpage

1483

Abstract

High power operation in 1.5 μm butt-jointed DBR lasers, made entirely by MOVPE is demonstrated. An output power of more than 30 mW and 60 mW is observed in the CW and pulsed condition, respectively. The minimum spectral linewidth achieved here is 2.1 MHz, at an output power of 12.5 mW and the wavelength chirping width under NRZ modulation is 60-70% of that of conventional DFB lasers

Keywords

distributed Bragg reflector lasers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 12.5 MW; CW; MOVPE; NRZ modulation; butt-jointed DBR lasers; low chirping characteristics; minimum spectral linewidth; output power; pulsed condition;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

27915

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1064445