A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors

A new nonlinear charge-conservative scalable dynamic electro-thermal compact model for laterally defused MOS (LDMOS) RF power transistors is described in this paper. The transistor is characterized using pulsed I-V and S-parameter measurements, to ensure isothermal conditions. A new extrinsic network and extrinsic parameter-extraction methodology is developed for high-power RF LDMOS transistor modeling, using manifold deembedding by electromagnetic simulation, and optimization of the extrinsic network parameter values over a broad frequency range. The intrinsic model comprises controlled charge and current sources that have been implemented using artificial neural networks, designed to permit accurate extrapolation of the transistor´s performance outside of the measured data domain. A thermal sub-circuit is coupled to the nonlinear model. Large-signal validation of this new model shows a very good agreement with measurements at 2.14 GHz.