DocumentCode :
1064671
Title :
Degradation of high-efficiency Gap red LED´s
Author :
Mizuta, Masashi ; Yoshino, Junji ; Kukimoto, Hiroshi
Author_Institution :
Tokyo Institute of Technology, Yokohama, Japan
Volume :
26
Issue :
8
fYear :
1979
fDate :
8/1/1979 12:00:00 AM
Firstpage :
1194
Lastpage :
1197
Abstract :
The degradation of high-efficiency GaP red-light-emitting diodes has been studied by the observation of the changes in minority-carrier diffusion lengths, Leand Lh, the Zn-O concentration, and the generated deep states in each stage of the degradation. The results have shown that the p-side degradation is followed by the n-side degradation. This degradation is dominated by the creation of deep centers responsible for the shortening of Leand Lh. The decrease in the Zn-O concentration is less important in these high-efficiency diodes which have low Zn-O concentration and long initial diffusion lengths.
Keywords :
Charge carrier processes; Crystalline materials; Degradation; Electron traps; Helium; Light emitting diodes; Passivation; Semiconductor device measurement; Space technology; Testing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19576
Filename :
1480154
Link To Document :
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