Temperature behavior of ion-implanted ZnTe green LED´s

Ion implantation in ZnTe has been used for fabricating a metal-insulator-semiconductor (MIS) injection device. These diodes present a double-injection behavior with a negative resistance at the injection threshold. In forward bias, a narrow (<80-Å) green (5500-Å) electroluminescence is produced. Diode brightness per unit current density is in the range of 300 cd . m^-2/A . cm^-2and varies linearly with the injected current in the case of efficient phosphorus-doped ZnTe. These characteristics are studied in the temperature range of -100°C to +100°C so as to determine the fundamental properties of the diodes.