Title :
Room-temperature, continuous-wave operation for mode-stabilised AlGaInP visible-light semiconductor laser with a multiquantum-well active layer
Author :
Kawata, Shigeo ; Kobayashi, Kaoru ; Fujii, Hiromitsu ; Hino, I. ; Gomyo, A. ; Hotta, Hitoshi ; Suzuki, Takumi
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Kawasaki
fDate :
11/24/1988 12:00:00 AM
Abstract :
646 nm continuous-wave operation at room temperature (25°C) has been achieved by a transverse mode stabilised AlGaInP laser diode with a (multi-)quantum-well structure. The laser structure was grown by metalorganic vapour phase epitaxy. The threshold current (density) is 55 mA (4.4 kA/cm2) and maximum light output power is 19 mW. Stable fundamental transverse-mode operation was obtained, at least up to 15 mW
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; vapour phase epitaxial growth; 19 mW; 25 degC; 55 mA; 646 nm; AlGaInP; maximum light output power; metalorganic vapour phase epitaxy; multiquantum-well active layer; room temperature; threshold current; transverse mode stabilised; visible-light semiconductor laser;
Journal_Title :
Electronics Letters
