Analysis of the high temperature characteristics of InGaAs-AlGaAs strained quantum-well lasers

Author

Derry, P.L. ; Fu, R.J. ; Hong, C.S. ; Chan, E.Y. ; Figueroa, L.

Author_Institution

Boeing Defense & Space Group, Seattle, WA, USA

Volume

28

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2698

Lastpage

2705

Abstract

The effect of high temperature on the threshold gain and threshold current density of an In_0.15Ga_0.85As strained quantum-well laser is examined both theoretically and experimentally. It is found that the nonlinearity of the gain-versus-current relationship increases with temperature. The implications of this result on laser cavity design for optimal high-temperature performance are discussed. The effect of high temperature on modulation bandwidth is also considered. While the numerical results are specific to an In_0.15Ga_0.85As strained quantum-well laser, qualitatively they apply to all quantum-well lasers

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical modulation; semiconductor lasers; InGaAs-AlGaAs; gain-versus-current relationship; high temperature characteristics; laser cavity design; modulation bandwidth; nonlinearity; optimal high-temperature performance; strained quantum-well lasers; threshold current density; threshold gain; Free electron lasers; Gallium arsenide; Heating; Laser modes; Laser theory; Optical pulses; Quantum well lasers; Temperature dependence; Temperature measurement; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.166462

Filename

166462