A reassessment of standard rate equations for low facet reflectivity semiconductor lasers using traveling wave rate equations

Author

Thedrez, Bruno J. ; Lee, Chi H.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

Volume

28

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2706

Lastpage

2713

Abstract

A set of traveling wave equations, which are a simple extension of the common rate equations, is used to study the effect of longitudinal gain saturation in Fabry-Perot semiconductor lasers. Analytical solutions are derived which are valid for both low and high Q cavities. A comparison is made to a theory with no spatial dependence. The maximum longitudinal carrier density deviation from the threshold value under lasing conditions is calculated for arbitrary facet reflectivities. It is shown that this deviation leads to linear equations for the emitted output power when compared to a standard rate equation theory. Improved designs for semiconductor lasers are suggested from this analysis

Keywords

laser cavity resonators; laser theory; optical saturation; reflectivity; semiconductor lasers; Fabry-Perot semiconductor lasers; common rate equations; diode laser design; emitted output power; high Q cavities; lasing conditions; linear equations; longitudinal gain saturation; low Q-cavities; low facet reflectivity semiconductor lasers; maximum longitudinal carrier density deviation; standard rate equations; threshold value; traveling wave rate equations; Charge carrier density; Diode lasers; Equations; Laser modes; Laser theory; Optical design; Power generation; Pump lasers; Reflectivity; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.166463

Filename

166463