A high-efficiency 50 GHz InGaAs multimode waveguide photodetector

Author

Kato, Kazutoshi ; Hata, Susumu ; Kawano, Kenji ; Yoshida, Junichi ; Kozen, Atsuo

Author_Institution

NTT Opto-electron. Lab., Kanagawa, Japan

Volume

28

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2728

Lastpage

2735

Abstract

A side-illuminated p-i-n photodetector with a multimode waveguide structure is proposed. Numerical and experimental results show that higher-order mode lights greatly enhance the coupling efficiency between the waveguide photodetector (WGPD) and a fiber, which leads to a high external quantum efficiency. The multimode WGPD has the major advantage that the external quantum efficiency and bandwidth can be derived independently of each other because the multimode waveguide structure can be designed without deteriorating electrical properties. The fabricated WGPD has an external quantum efficiency of 56% without AR coating and 68% with AR coating, and an electrical frequency 3 dB greater than 50 GHz at a 1.55-μm wavelength

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; p-i-n diodes; photodetectors; photodiodes; 1.55 micron; 50 GHz; 56 percent; AR coating; IR; InGaAs; coupling efficiency; fibre coupling; high external quantum efficiency; high-efficiency; higher-order mode lights; multimode waveguide photodetector; semiconductors; side-illuminated p-i-n photodetector; Bandwidth; Coatings; Frequency; Indium gallium arsenide; Indium phosphide; Optical coupling; Optical fiber communication; Optical surface waves; Optical waveguides; Photodetectors;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.166466

Filename

166466