• DocumentCode
    1064857
  • Title

    Can Atmospheric Neutrons Induce Soft Errors in nand Floating Gate Memories?

  • Author

    Cellere, Giorgio ; Gerardin, Simone ; Bagatin, Marta ; Paccagnella, Alessandro ; Visconti, Angelo ; Bonanomi, Mauro ; Beltrami, Silvia ; Harboe-Sørensen, Reno ; Virtanen, Ari ; Roche, Philippe

  • Author_Institution
    Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova
  • Volume
    30
  • Issue
    2
  • fYear
    2009
  • Firstpage
    178
  • Lastpage
    180
  • Abstract
    Atmospheric neutrons can interact with the matter inside a microelectronic chip and generate ionizing particles, which in turn can change the state of one or more memory bits [soft error (SE)]. In this letter, we show that SEs are possible in Flash memories, although with extremely low probabilities. While this problem will increase for future technologies, we do not expect SEs to be the reliability limiting factor for further floating gate scaling.
  • Keywords
    circuit reliability; flash memories; logic gates; neutron effects; NAND floating gate memories; atmospheric neutrons; flash memories; floating gate scaling; reliability limiting factor; soft errors; Atmospheric neutron; flash memories; soft error (SE) rate;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.2009885
  • Filename
    4749278
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1064857