• DocumentCode
    1064860
  • Title

    On the I-V characteristics of floating-gate MOS transistors

  • Author

    Wang, S.T.

  • Volume
    26
  • Issue
    9
  • fYear
    1979
  • fDate
    9/1/1979 12:00:00 AM
  • Firstpage
    1292
  • Lastpage
    1294
  • Abstract
    The effects of capacitive coupling on the I-V characteristics of floating-gate MOS transistors are described. A set of modified IV equations for these devices is presented and compared with experimental results.
  • Keywords
    Capacitance; Computational fluid dynamics; Conductivity; Equations; Intrusion detection; MOSFETs; Nonvolatile memory; Semiconductor memory; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19595
  • Filename
    1480173
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1064860