A New Thin-Film Transistor Pixel Structure Suppressing the Leakage Current Effects on AMOLED

We propose a new pixel structure employing solid-phase crystallized silicon thin-film transistors which suppresses the leakage current effects on active-matrix organic light-emitting diode (AMOLED) displays. The pixel structure has been fabricated on a glass substrate employing the field-enhanced rapid thermal annealing technology. In the proposed pixel, the charge holding capability is considerably enhanced due to the capacitor located between two series-connected switch transistors. Our experimental results shows that the average variation range of the OLED current is suppressed less than 0.5% while the conventional one exceeded 4%.