DocumentCode :
1064967
Title :
Substrate current in GaAs MESFET´s
Author :
Eastman, L.F. ; Shur, M.S.
Author_Institution :
Cornell University, Ithaca, NY
Volume :
26
Issue :
9
fYear :
1979
fDate :
9/1/1979 12:00:00 AM
Firstpage :
1359
Lastpage :
1361
Abstract :
It is shown that the substrate current in GaAs MESFET\´s may be related to the electron injection into the substrate region adjacent to the high-field domain in the active layer. A simple one-dimensional calculation shows that the substrate current Isub is proportional to 
and 
where Vds is the drain-to-source voltage, n0 is the doping density in the active layer. At 
cm-3and 
V we estimate 
mA per millimeter gate in good agreement with experimental results.
and where V cm-3and V we estimate mA per millimeter gate in good agreement with experimental results.Keywords :
Computer simulation; Current density; Doping; Electrons; Electrostatics; FETs; Gallium arsenide; MESFETs; Poisson equations; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19606
Filename :
1480184
Link To Document :
