Title :
A model for excess noise of semiconducting BaSrTiO3
Author_Institution :
Technical University of Budapest, Budapest, Hungary
fDate :
9/1/1979 12:00:00 AM
Abstract :
Measurements on semiconducting BaSrTiO3showed that this material exhibits a high 1/f excess noise. The model described here attributes this high excess noise to grain boundaries. The small volume and the depletion of the contact spots may justify the noise levels observed.
Keywords :
Phased arrays; Photovoltaic systems; Radiative recombination; Semiconductivity; Semiconductor device noise; Semiconductor materials; Silicon; Solar power generation; Temperature distribution; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19610
