DocumentCode :
1065050
Title :
Influence of ΦMS (T) in the determination of the Si-SiO2 surface states
Author :
Gonçalves, Fontella N. ; Charry, E.
Author_Institution :
University of Sao Paulo, Sao Paulo, Brasil
Volume :
26
Issue :
9
fYear :
1979
fDate :
9/1/1979 12:00:00 AM
Firstpage :
1377
Lastpage :
1378
Abstract :
The determination of fast surface states at the Si-Si02 system by the Gray-Brown low-temperature technique is carefully analyzed. Included in this analysis is the variation of the semiconductor work function with the temperature and the doping impurity partial ionization at low temperature. It is shown that particularly the influence of the semiconductor work function is very significant. For instance, we obtained for an Si-SiO2 system a number of surface states, with energy levels between 0.32 and 0.53 eV, 
cm-2or 
cm-2, the difference due to the influence of the semiconductor work function only.
cm-2or cm-2, the difference due to the influence of the semiconductor work function only.Keywords :
Capacitance; Capacitors; Dielectric constant; Energy states; Ionization; Semiconductor device doping; Semiconductor impurities; Substrates; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19614
Filename :
1480192
Link To Document :
