Title :
Note on unilateral power gain as applied to submicrometre transistors
Author_Institution :
Div. of Network Theory, Chalmers Univ of Technol., Gothenburg
fDate :
11/24/1988 12:00:00 AM
Abstract :
A theoretical analysis of the unilateral power gain applied to submicrometre transistors for high-frequency performance is presented. The new exact formulas shows that one can distinguish three resonant conditions. The conclusions are based on analysis of two different equivalent circuits
Keywords :
equivalent circuits; field effect transistors; semiconductor device models; solid-state microwave devices; EHF; FET; MM-wave devices; equivalent circuits; exact formulas; high-frequency performance; microwave transistors; models; resonant conditions; submicrometre transistors; submicron transistors; theoretical analysis; unilateral power gain;
Journal_Title :
Electronics Letters
