DocumentCode :
1065360
Title :
DC to 50 GHz single-pole four-throw InP-HEMT switch IC with highly uniform performance
Author :
Kamitsuna, H. ; Onodera, K. ; Sugitani, S. ; Nishimura, K. ; Murata, K. ; Enoki, T.
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi
Volume :
45
Issue :
12
fYear :
2009
Firstpage :
626
Lastpage :
627
Abstract :
A single-pole four-throw (SP4T) switch IC with a 3 dB bandwidth of over 50 GHz, which is believed to be the highest among cold-FET SP4T switches, is presented. A miniature and ideal divergence structure with an advanced four-level interconnect provides highly uniform performance in different paths.
Keywords :
field effect transistors; high electron mobility transistors; indium compounds; integrated circuits; switches; HEMT switch IC; InP; cold-FET SP4T switches; frequency 50 GHz; single-pole four-throw switch IC;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2009.0472
Filename :
5069777
Link To Document :
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