DocumentCode
1065374
Title
Nanopower CMOS sub-bandgap reference with 11 ppm/°C temperature coefficient
Author
Yan, W. ; Li, W. ; Liu, R.
Author_Institution
Dept. of Microelectron., Fudan Univ., Shanghai
Volume
45
Issue
12
fYear
2009
Firstpage
627
Lastpage
629
Abstract
Two nanopower CMOS sub-bandgap references have been designed with the Chartered 0.35 mum CMOS process, which generate two precise voltages of 96.6 and 108.9 mV with minimal temperature coefficients of 11.4 and 9.2 ppm/degC, respectively. Both circuits operate properly with a supply voltage down to 1.1 V and a supply current below 26 nA. The power supply rejection ratio for each circuit without any filtering capacitor at 100 Hz and 10 MHz is lower than 60 and 40 dB, respectively.
Keywords
CMOS analogue integrated circuits; integrated circuit design; low-power electronics; nanoelectronics; reference circuits; frequency 10 MHz; frequency 100 Hz; nanopower CMOS sub-bandgap reference design; power supply rejection ratio; size 0.35 mum; temperature coefficients; voltage 108.9 mV; voltage 96.6 mV;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2009.3705
Filename
5069778
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