• DocumentCode
    1065374
  • Title

    Nanopower CMOS sub-bandgap reference with 11 ppm/°C temperature coefficient

  • Author

    Yan, W. ; Li, W. ; Liu, R.

  • Author_Institution
    Dept. of Microelectron., Fudan Univ., Shanghai
  • Volume
    45
  • Issue
    12
  • fYear
    2009
  • Firstpage
    627
  • Lastpage
    629
  • Abstract
    Two nanopower CMOS sub-bandgap references have been designed with the Chartered 0.35 mum CMOS process, which generate two precise voltages of 96.6 and 108.9 mV with minimal temperature coefficients of 11.4 and 9.2 ppm/degC, respectively. Both circuits operate properly with a supply voltage down to 1.1 V and a supply current below 26 nA. The power supply rejection ratio for each circuit without any filtering capacitor at 100 Hz and 10 MHz is lower than 60 and 40 dB, respectively.
  • Keywords
    CMOS analogue integrated circuits; integrated circuit design; low-power electronics; nanoelectronics; reference circuits; frequency 10 MHz; frequency 100 Hz; nanopower CMOS sub-bandgap reference design; power supply rejection ratio; size 0.35 mum; temperature coefficients; voltage 108.9 mV; voltage 96.6 mV;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.3705
  • Filename
    5069778