Title :
Extremely low-threshold 1.3 μm GaInAsP/InP DFB PPIBH laser
Author :
Ohkura, Y. ; Yoshida, Norihiro ; Takemoto, Ayumi ; Kakimoto, Shinji
Author_Institution :
LSI R&D Lab., Mitsubishi Electr. Corp., Hyogo
fDate :
11/24/1988 12:00:00 AM
Abstract :
Extremely low-threshold-current 1.3 μm GaInAsP/InP distributed feedback, p-substrate partially inverted buried heterostructure lasers have been fabricated by the MOCVD/LPE hybrid process. A CW threshold of 3.1 mA is achieved at room temperature. A side mode suppression ratio of more than 35 dB is obtained above 1 mW light output level
Keywords :
III-V semiconductors; chemical vapour deposition; distributed feedback lasers; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; 1 mW; 1.3 micron; 3.1 mA; CW threshold; DFB lasers; GaInAsP-InP; LPE; MOCVD; low-threshold-current; p-substrate partially inverted buried heterostructure lasers; room temperature; semiconductors; side mode suppression ratio;
Journal_Title :
Electronics Letters
