Title :
All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-μm wavelength range for CWDM band applications
Author :
Park, M.-R. ; Kwon, O.-K. ; Han, W.-S. ; Lee, K.-H. ; Park, S.-J. ; Yoo, Bum-Soo
Author_Institution :
Korea Electron. & Telecommun. Res. Inst., Daejeon
Abstract :
All-epitaxial InAlGaAs-InP vertical-cavity surface-emitting lasers grown by metal-organic chemical vapor deposition were successfully demonstrated in the wavelength ranging from 1.3 to 1.6 mum. The devices showed the high performances such as single-mode output power of higher than 1.1mW, sidemode suppression ratio of 37 dB, divergence angle of 9deg, and CW operation of temperature up to 80 degC. We achieved the modulation bandwidth exceeding 2.5 Gb/s and power penalty free transmission over 30 km
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; optical communication equipment; optical fibre communication; semiconductor growth; semiconductor lasers; surface emitting lasers; wavelength division multiplexing; 1.3 to 1.6 mum; 30 km; CWDM; InAlGaAs-InP; InAlGaAs-InP VCSEL; metal-organic chemical vapor deposition; modulation bandwidth; sidemode suppression ratio; vertical-cavity surface-emitting lasers; Chemical lasers; Chemical vapor deposition; Distributed Bragg reflectors; Epitaxial growth; Fiber lasers; MOCVD; Optical fiber communication; Optical surface waves; Surface emitting lasers; Vertical cavity surface emitting lasers; Epitaxial; InAlGaAs; InP; metal–organic chemical vapor deposition (MOCVD); monolithic; vertical-cavity surface-emitting laser (VCSEL);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.879940
