High Voc dye sensitised solar cell using RF-sputtered TiO2 compact layers

Presented is a dye sensitised solar cell (DSSC) with very high open circuit voltage (V_oc) and shunt resistance (R_SH) using an RF-sputtered titanium dioxide compact layer. TiO₂ films of about 100 nm thickness were RF-sputtered at room temperature on indium-tin-oxide coated glass substrates and used as the compact layer for fabrication of DSSCs. Current-voltage characteristics of the DSSCs under AM 1.5 illumination condition showed a very high V_OC of 780 mV, high R_SH of 400 K , short circuit current density (J_sc) of 12.3 mA/cm², and fill factor (FF) of 0.61, while the V_OC, R_SH, J_SC, and FF of a DSSC fabricated using a conventional sol-gel processed TiO₂ compact layer were 520 mV, 463 , 5.4 mA/cm², and 0.46, respectively.