Method for extraction of η parameter characterising μeff against Eeff curves in FD-SOI Si MOS devices

A novel method for the extraction of the eta parameter characterising the eta_eff(E _eff) curves in FD-SOI Si MOS transistors is proposed. Using this method, it is found that eta is about 0.6-0.7 for electrons and 0.3-0.4 for holes, whatever the gate stacks (SiO₂, high-k and box oxide). These obtained eta values differ significantly from standard bulk ones, justifying the interest of such a eta extraction method for FD-SOI architectures.