Title :
On-Chip T/R Switchable Balun for 5- to 6-GHz WLAN Applications
Author :
Hyo-Sung Lee ; Kyungwon Kim ; Byung-Wook Min
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
This brief presents a transmit/receive (T/R) switch combined with a transformer balun. The differential inductor of the transformer balun is symmetrically wound to have the center taps at the outmost winding. The center taps are controlled by nMOS transistors to switch between transmit and receive modes. The transformer balun is matched at 5-6 GHz using parasitic capacitances of the transistors at the differential port and an integrated capacitor at the single-ended port. For high transmit power handling, two transistors are stacked at the transmit path, and the source and drain of the transistors are biased with a dc voltage. The measured insertion loss of the T/R switchable balun is 2.4-3.3 dB at 5-6 GHz with a return loss of less than -16 dB. The amplitude and phase imbalance of the balun, respectively, are less than 1 dB and 4°. The input 1-dB power compression points for the transmit and receive mode are 28 and 20 dBm, respectively. The integrated T/R switchable balun occupies only 0.12 mm2.
Keywords :
baluns; microwave switches; radio transceivers; transformers; wireless LAN; DC voltage; WLAN applications; balun amplitude; differential inductor; differential port; frequency 5 GHz to 6 GHz; integrated capacitor; loss 2.4 dB to 3.3 dB; measured insertion loss; nMOS transistors; on-chip T-R switchable balun; phase imbalance; power compression points; receive mode; single-ended port; transformer balun; transistor parasitic capacitances; transmit mode; transmit power handling; transmit-receive switch; Impedance matching; Insertion loss; Loss measurement; MOS devices; Ports (Computers); Switches; Switching circuits; Balun; CMOS switch; T/R switch; balun; deep n-well nMOSFET; transformer; transmit/receive (T/R) switch;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2014.2362662