DocumentCode :
1065640
Title :
Ballistic transport in semiconductor at low temperatures for low-power high-speed logic
Author :
Shur, Michael S. ; Eastman, Lester F.
Author_Institution :
University of Minnesota, Minneapolis, MN
Volume :
26
Issue :
11
fYear :
1979
fDate :
11/1/1979 12:00:00 AM
Firstpage :
1677
Lastpage :
1683
Abstract :
At low temperatures, a mean free path of electrons in semiconductors may exceed device dimensions. Current-voltage characteristics, potentials, electrical field, and carrier distributions are calculated for a two-terminal device under such conditions when the electron transport is ballistic. Current-voltage characteristics of a "ballistic" FET are analyzed using an approach similar to the Shockley model. It is shown that very high drift velocities can be obtained at low voltages leading to high speed and low power consumption in possible applications in logic circuits. For example, GaAs logic devices with characteristic dimensions about a micrometer or less at 77 K will be comparable with or better than Josephson tunneling logic gates.
Keywords :
Ballistic transport; Current-voltage characteristics; Electric potential; Electron mobility; Energy consumption; FETs; Josephson junctions; Logic devices; Low voltage; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19671
Filename :
1480249
Link To Document :
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