DocumentCode
1065687
Title
A low dark current, high-speed GaAs/Al/sub 0.3/Ga/sub 0.7/As heterostructure Schottky barrier photodiode
Author
Lee, D.H. ; Li, S.S. ; Paulter, N.G.
Author_Institution
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Volume
25
Issue
5
fYear
1989
fDate
5/1/1989 12:00:00 AM
Firstpage
858
Lastpage
861
Abstract
A high-speed and high-sensitivity planar GaAs/Al0.3Ga0.7As heterostructure Schottky barrier photodiode is discussed. Using a highly doped Al0.3Ga0.7As buffer layer between the active layer and semi-insulating GaAs substrate, the series resistance and the undesired diffusion tailing are greatly reduced. Studies of surface stabilization and antireflection coating, performed to reduce the reverse-bias dark current and the reflection loss, resulted in significant improvement in the sensitivity of the photodiode. The measured internal quantum efficiency and responsivity are 60-77% and 0.47-0.6 A/W, respectively, for the wavelength range of 0.5-0.84 μm. A risetime of 8.5 ps and an FWHM of 16 ps were measured by using a sampling/correlation method.
Keywords
III-V semiconductors; Schottky-barrier diodes; aluminium compounds; antireflection coatings; gallium arsenide; high-speed optical techniques; integrated optoelectronics; optical communication equipment; photodetectors; photodiodes; 0.5 to 0.84 micron; 60 to 77 percent; 8.5 ps; FWHM; GaAs-Al0.3Ga0.7As; active layer; antireflection coating; heterostructure Schottky barrier photodiode; high-speed high-sensitivity planar photodiode; highly doped buffer layer; integrated optoelectronics; internal quantum efficiency; low dark current; reflection loss; responsivity; reverse-bias dark current; risetime; sampling/correlation method; semi-insulating substrate; semiconductor; sensitivity; series resistance; surface stabilization; undesired diffusion tailing; wavelength range; Buffer layers; Coatings; Dark current; Electrical resistance measurement; Gallium arsenide; Photodiodes; Reflection; Schottky barriers; Surface resistance; Wavelength measurement;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.27972
Filename
27972
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