DocumentCode :
1065696
Title :
Variations of linewidth enhancement factor and linewidth as a function of laser geometry in (AlGa)As lasers
Author :
Lee, Sang S. ; Figueroa, Luis ; Ramaswamy, Ramu
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Volume :
25
Issue :
5
fYear :
1989
fDate :
5/1/1989 12:00:00 AM
Firstpage :
862
Lastpage :
870
Abstract :
A quantitative analysis of the laser geometry dependence of the linewidth enhancement factor α and linewidth Δf in GaAs/AlGaAs lasers is presented. Analytical expressions for the refractive index change and α are presented. Variations of α and Δf depending on active layer thickness and laser length are estimated by using the expressions and previous experimental data of absorption spectra. Considering small variations in the reported experimental data depending on laser type, it is shown that the calculated values of α agree well with the experimental data. The magnitude of α decreases gradually with the decrease of active layer thickness and laser length. Since the change of active layer thickness affects only α, neglecting small variations of other terms in the linewidth expression, the reduction of active layer thickness is suggested to be a practical method for the reduction of linewidth.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; AlGaAs laser; GaAs-AlGaAs; absorption spectra; active layer thickness; laser geometry; laser length; linewidth enhancement factor variations; linewidth variations; quantitative analysis; refractive index change; semiconductor laser; Absorption; Charge carrier density; Diode lasers; Gallium arsenide; Geometrical optics; Laser beams; Laser transitions; Photonic band gap; Refractive index; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.27973
Filename :
27973
Link To Document :
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