Transformation of rate equations and approximate transient solutions for semiconductor lasers

Author

Lee, Chang-Hee ; Shin, Sang-Yung

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea

Volume

25

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

878

Lastpage

884

Abstract

Effects of the gain saturation, spontaneous emission, Auger recombination, and fast saturable absorption on the dynamics of laser diodes are studied approximately in a unified manner by transforming the rate equation to generalized coordinates. By applying the multiple-scales expansion method to the transformed nonlinear rate equations, the transient solutions of relaxation oscillation in laser diodes are derived. Analytic expressions for the photon density and the electron density agree well with numerical calculations.

Keywords

electron-hole recombination; laser theory; optical saturable absorption; oscillations; semiconductor junction lasers; transients; Auger recombination; approximate transient solutions; electron density; fast saturable absorption; gain saturation; laser diodes; multiple-scales expansion method; photon density; relaxation oscillation; semiconductor lasers; spontaneous emission; transformed nonlinear rate equations; Absorption; Amplitude modulation; Diode lasers; Electron emission; Laser modes; Maxwell equations; Nonlinear equations; Pulse width modulation; Semiconductor lasers; Spontaneous emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.27975

Filename

27975