Finite-element analysis of quantum wells of arbitrary semiconductors with arbitrary potential profiles

Author

Nakamura, Kenji ; Shimizu, Akira ; Koshiba, Masanori ; Hayata, Kazuya

Author_Institution

Canon Inc., Kanagawa, Japan

Volume

25

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

889

Lastpage

895

Abstract

A finite-element method for the analysis of eigenstates in a quantum well, which is based on the Galerkin procedure, is discussed. A general boundary condition of the envelope function at the heterointerface is introduced by using the transfer matrix. The validity of the method is confirmed by calculating the eigenstates of GaAs/AlGaAs and InAs/GaSb rectangular quantum wells. Numerical examples of voltage-applied quantum wells are presented.

Keywords

III-V semiconductors; aluminium compounds; eigenvalues and eigenfunctions; finite element analysis; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum wells; GaAs-AlGaAs; Galerkin procedure; InAs-GaSb; arbitrary potential profiles; arbitrary semiconductors; boundary condition; eigenstates; envelope function; finite-element method; heterointerface; quantum wells; rectangular quantum wells; transfer matrix; voltage-applied quantum wells; Boundary conditions; Effective mass; Finite element methods; Gallium arsenide; MOCVD; Molecular beam epitaxial growth; Moment methods; Schrodinger equation; Senior members; Voltage;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.27977

Filename

27977