Title :
A new semiconductor device-the gate-controlled photodiode: device concept and experimental results
Author :
Sun, C.C. ; Wieder, Herman H. ; Chang, William S C
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
5/1/1989 12:00:00 AM
Abstract :
The gate-controlled photodiode (GCPD) is a photodetector whose external quantum efficiency can be modulated by an applied gate voltage. In its linear region, the GCPD is a multiplier of the incident light intensity and gate voltage. Its potential applications include optical matrix multiplication, matrix inversion, etc. This device has been demonstrated experimentally in Si substrate. A 10-ns response time and a nonlinearity of less than 3% with a 30 dB range of light intensity and within a 23 dB range of gate voltage have been obtained.
Keywords :
elemental semiconductors; photodetectors; photodiodes; silicon; 10 ns; Si; applied gate voltage; device concept; external quantum efficiency; gate-controlled photodiode; incident light intensity; linear region; matrix inversion; optical matrix multiplication; photodetector; response time; semiconductor device; substrate; Optical arrays; Optical modulation; Optical signal processing; P-n junctions; Photoconductivity; Photodiodes; Semiconductor diodes; Semiconductor materials; Substrates; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
