DocumentCode :
1065752
Title :
E2FAMOS—An electrically eraseable reprogrammable charge storage device
Author :
Yaron, Giora ; Lukaszek, W.A. ; Frohman-Bentchkowsky, Dov
Author_Institution :
Hughes Research Center, Newport Beach, CA
Volume :
26
Issue :
11
fYear :
1979
fDate :
11/1/1979 12:00:00 AM
Firstpage :
1754
Lastpage :
1759
Abstract :
A new electrically eraseable nonvolatile charge storage device is described. The electrically eraseable floating-gate avalanche injection MOS (E2FAMOS) structure is an n-channel dual-stacked-gate MOS transistor programmed by avalanche injection from the pinchoff region and erased by hot electron injection from the floating gate.
Keywords :
Dielectric devices; Dielectric substrates; Dielectrics and electrical insulation; FETs; MOSFETs; Nonvolatile memory; Secondary generated hot electron injection; Semiconductor memory; Tunneling; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19681
Filename :
1480259
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1065752
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