Title :
Thermal instability—The precursor to switching in inhomogeneous thin films
Author_Institution :
Wayne State University, Detroit, MI
fDate :
11/1/1979 12:00:00 AM
Abstract :
Thermal stability criteria capable of explaining Thoma´s observations that bias-induced reversible switching transitions in inhomogeneous thin insulating and semiconducting films occur at a critical value of local power density are developed and analyzed. One model, based on a relation between the temperature and heat current, is then applied to specific inhomogeneous thin amorphous chalcogenide films, and good qualitative agreement is shown to exist between theory and experiment.
Keywords :
Amorphous materials; Crystalline materials; Crystallization; Insulation; Power semiconductor switches; Semiconductivity; Semiconductor thin films; Stability criteria; Temperature; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19683