An approximate closed-form model for simulating thyristor forward-blocking characteristics

A recently developed method for determining the model parameters of the forward-blocking characteristics of gate-turnoff (GTO) thyristors [1] is applied to the determination of the effects of these parameters on GTO behavior. Specifically, minority-carrier lifetime and the device-impurity profile are varied in order to estimate their effects on electrical characteristics such as gate-trigger current, holding current, and turn-on gain. An approximate design window for these turn-on characteristics is derived.