Title :
Application of Si MBE to microwave hyperabrupt diodes
Author :
Goodwin, Charles A. ; Ota, Yusuke
Author_Institution :
Bell Laboratories, Reading, PA
fDate :
11/1/1979 12:00:00 AM
Abstract :
Hyperabrupt impurity profiles were formed by the Si molecular beam epitaxy (MBE) technique. Thin Sb-doped n-type epitaxial layers grown on n+substrates were used to successfully fabricate hyperabrupt varactor diodes. The characteristics of microwave diodes containing hyperabrupt profiles produced by a conventional ion-implantation and drive-in technique were compared with those having profiles "grown-in" by the MBE technique. The diodes made from Si-MBE films exhibited superior RF performance.
Keywords :
Doping profiles; Epitaxial growth; Epitaxial layers; Impurities; Molecular beam epitaxial growth; P-i-n diodes; Radio frequency; Silicon; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19688
