DocumentCode
1065824
Title
Application of Si MBE to microwave hyperabrupt diodes
Author
Goodwin, Charles A. ; Ota, Yusuke
Author_Institution
Bell Laboratories, Reading, PA
Volume
26
Issue
11
fYear
1979
fDate
11/1/1979 12:00:00 AM
Firstpage
1796
Lastpage
1799
Abstract
Hyperabrupt impurity profiles were formed by the Si molecular beam epitaxy (MBE) technique. Thin Sb-doped n-type epitaxial layers grown on n+substrates were used to successfully fabricate hyperabrupt varactor diodes. The characteristics of microwave diodes containing hyperabrupt profiles produced by a conventional ion-implantation and drive-in technique were compared with those having profiles "grown-in" by the MBE technique. The diodes made from Si-MBE films exhibited superior RF performance.
Keywords
Doping profiles; Epitaxial growth; Epitaxial layers; Impurities; Molecular beam epitaxial growth; P-i-n diodes; Radio frequency; Silicon; Substrates; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19688
Filename
1480266
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