Title :
Field induced reemission of electrons trapped in SiO2
Author :
Forbes, L. ; Sun, E. ; Alders, R. ; Moll, J.
Author_Institution :
University of California, Davis, CA
fDate :
11/1/1979 12:00:00 AM
Abstract :
A new form of hot electron injection and trapping in n-channel IGFET´s is described, a necessary and sufficient condition for the emission of these trapped electrons is a reset pulse of negative gate and positive drain voltages. The effect of this trapping on device characteristics, reliability, and the proposed low-temperature operation of IGFET´s is discussed.
Keywords :
Electron emission; Electron traps; FETs; Intrusion detection; Secondary generated hot electron injection; Sufficient conditions; Sun; Temperature; Thermal stresses; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19691
