• DocumentCode
    1065852
  • Title

    Field induced reemission of electrons trapped in SiO2

  • Author

    Forbes, L. ; Sun, E. ; Alders, R. ; Moll, J.

  • Author_Institution
    University of California, Davis, CA
  • Volume
    26
  • Issue
    11
  • fYear
    1979
  • fDate
    11/1/1979 12:00:00 AM
  • Firstpage
    1816
  • Lastpage
    1818
  • Abstract
    A new form of hot electron injection and trapping in n-channel IGFET´s is described, a necessary and sufficient condition for the emission of these trapped electrons is a reset pulse of negative gate and positive drain voltages. The effect of this trapping on device characteristics, reliability, and the proposed low-temperature operation of IGFET´s is discussed.
  • Keywords
    Electron emission; Electron traps; FETs; Intrusion detection; Secondary generated hot electron injection; Sufficient conditions; Sun; Temperature; Thermal stresses; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19691
  • Filename
    1480269
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1065852