DocumentCode :
1065858
Title :
Characterization of semiconductor materials by Raman microprobe
Author :
Nakashima, S. ; Hangyo, M.
Author_Institution :
Dept. of Appl. Phys., Osaka Univ., Japan
Volume :
25
Issue :
5
fYear :
1989
fDate :
5/1/1989 12:00:00 AM
Firstpage :
965
Lastpage :
975
Abstract :
The physical background of semiconductor characterization by Raman scattering and some of the technical problems in the Raman microprobe are described. Several significant applications for semiconductors in bulk, thin film, and device configurations are presented.
Keywords :
Raman spectra of inorganic solids; reviews; semiconductor thin films; semiconductors; spectrochemical analysis; Raman microprobe; Raman scattering; bulk configuration; device configurations; semiconductor characterization; semiconductor materials; thin film configuration; Capacitive sensors; Crystallography; Crystals; Optical detectors; Optical films; Optical microscopy; Optical scattering; Raman scattering; Semiconductor materials; Spectroscopy;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.27987
Filename :
27987
Link To Document :
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