DocumentCode
1065868
Title
Lasing characteristics of distributed-feedback GaAs-GaAlAs diode lasers with separate optical and carrier confinement
Author
Aiki, Kunio ; Nakamura, Michiharu ; Umeda, Jun-ichi
Author_Institution
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, Japan
Volume
12
Issue
10
fYear
1976
fDate
10/1/1976 12:00:00 AM
Firstpage
597
Lastpage
603
Abstract
The lasing characteristics of separate-confinement-heterostructure (SCH-structure) distributed-feedback (DFB) diode lasers are examined theoretically and experimentally. Wave propagation in five-layer SCH waveguides is analyzed to estimate such parameters as the lasing wavelength, coupling constant, and external quantum efficiency. Spectral and modal behavior are studied in the experiment and compared with the theoretical predictions. Diodes are shown to lase in a single longitudinal mode with a definite polarization. Spectral width is about 300 MHz just above the threshold, and becomes wider with increased excitation level. An output power of 40 mW with an external quantum efficiency of 5 percent is obtained under CW operation.
Keywords
Carrier confinement; Diode lasers; Laser theory; Optical propagation; Optical waveguide theory; Optical waveguides; Radiative recombination; Temperature; Threshold current; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1976.1069043
Filename
1069043
Link To Document