DocumentCode :
1065868
Title :
Lasing characteristics of distributed-feedback GaAs-GaAlAs diode lasers with separate optical and carrier confinement
Author :
Aiki, Kunio ; Nakamura, Michiharu ; Umeda, Jun-ichi
Author_Institution :
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, Japan
Volume :
12
Issue :
10
fYear :
1976
fDate :
10/1/1976 12:00:00 AM
Firstpage :
597
Lastpage :
603
Abstract :
The lasing characteristics of separate-confinement-heterostructure (SCH-structure) distributed-feedback (DFB) diode lasers are examined theoretically and experimentally. Wave propagation in five-layer SCH waveguides is analyzed to estimate such parameters as the lasing wavelength, coupling constant, and external quantum efficiency. Spectral and modal behavior are studied in the experiment and compared with the theoretical predictions. Diodes are shown to lase in a single longitudinal mode with a definite polarization. Spectral width is about 300 MHz just above the threshold, and becomes wider with increased excitation level. An output power of 40 mW with an external quantum efficiency of 5 percent is obtained under CW operation.
Keywords :
Carrier confinement; Diode lasers; Laser theory; Optical propagation; Optical waveguide theory; Optical waveguides; Radiative recombination; Temperature; Threshold current; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1976.1069043
Filename :
1069043
Link To Document :
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