Raman microprobe analysis of temperature profiles in CW laser heated silicon microstructures

Author

Pazionis, Gregory D. ; Tang, Hua ; Herman, Irving P.

Author_Institution

Dept. of Appl. Phys., Columbia Univ., New York, NY, USA

Volume

25

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

976

Lastpage

988

Abstract

Steady-state laser heating of silicon disk microstructure on focused silica and sapphire is examined using the 4880 and 5145 Å lines from an argon-ion laser to heat the disk at the center and to probe it with submicrometer spatial resolution. The Stokes shift and line broadening of the Raman microprobe spectra are compared to simulations of the Raman spectra, which utilize temperature profiles calculated by a finite-difference analysis of the heat flow equation. The Raman simulation model incorporates the effects of temperature inhomogeneities, strain, and photon-created free carriers within the probed volume; temperature nonuniformity is found to be the most important factor and to be quite significant.

Keywords

Raman spectra of inorganic solids; elemental semiconductors; laser beam effects; sapphire; silicon; silicon compounds; spectral line breadth; spectral line shift; 4880 Å; 5145 Å; Al₂O₃; Ar⁺ ion laser; CW laser heated; Raman microprobe spectra; Raman simulation model; Si; Si disc microstructures; SiO₂; Stokes shift; disk; finite-difference analysis; heat flow equation; line broadening; photon-created free carriers; probed volume; sapphire; semiconductor; silica; strain; submicrometer spatial resolution; temperature inhomogeneities; temperature nonuniformity; temperature profiles; Analytical models; Equations; Finite difference methods; Heating; Microstructure; Probes; Silicon compounds; Spatial resolution; Steady-state; Temperature;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.27988

Filename

27988