Raman spectroscopic assessment of Si and Be local vibrational modes in GaAs layers grown by molecular beam epitaxy

Author

Wagner, J. ; Ramsteiner, M.

Author_Institution

Fraunhofer-Inst. fuer Angewandte Festkorperphys., Freiburg, West Germany

Volume

25

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

993

Lastpage

996

Abstract

A Raman study of heavily Si- and Be-doped GaAs grown by molecular beam epitaxy is discussed. Both impurities give rise to local vibrational modes (LVM) which can be observed in Raman spectroscopy for impurity concentrations exceeding ~2×10¹⁸ cm^-3. Compared to absorption spectroscopy, which is the `classical´ technique to study LVMs in relatively thick (≥1 μm) layers, Raman spectroscopy permits analysis of the incorporation of both dopants in thin (≥10 nm) as-grown GaAs layers.

Keywords

III-V semiconductors; Raman spectra of inorganic solids; beryllium; gallium arsenide; heavily doped semiconductors; lattice localised modes; semiconductor epitaxial layers; silicon; GaAs:Be; GaAs:Si; Raman spectroscopic assessment; Raman study; absorption spectroscopy; dopants; layers; local vibrational modes; molecular beam epitaxy; relatively thick layers; semiconductor; thin as-grown layers; Absorption; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Optical scattering; Particle scattering; Photonic band gap; Raman scattering; Resonance; Spectroscopy;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.27990

Filename

27990