Novel applications of optical techniques to the study of buried semiconductor interfaces

Detailed electronic and structural information about buried semiconductor interfaces obtained through application of optical techniques (in particular photoluminescence) is discussed. The measurements described include the determination of band discontinuities, strain, and disorder associated with semiconductor heterointerfaces. The contactless and nondestructive nature of these optical techniques is particularly important for the study of heterointerfaces which are inherently inaccessible to direct electrical or physical contact.