DocumentCode :
1065959
Title :
MP-A8 Two-dimensional numerical simulation of GaAs MESFET´s with recessed-gate structure
Author :
Frensley, W.R.
Volume :
26
Issue :
11
fYear :
1979
fDate :
11/1/1979 12:00:00 AM
Firstpage :
1829
Lastpage :
1829
Keywords :
Breakdown voltage; Gallium arsenide; Geometry; Instruments; Laboratories; MESFETs; Numerical simulation; Power generation; Semiconductor process modeling; Surface treatment;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19702
Filename :
1480280
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1065959
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