DocumentCode :
1065976
Title :
MP-A7 fabrication of devices with submicrometer dimensions using a selective edge plating technique and conventional photolithography
Author :
Jackson, Thomas N. ; Masnari, N.A.
Volume :
26
Issue :
11
fYear :
1979
fDate :
11/1/1979 12:00:00 AM
Firstpage :
1829
Lastpage :
1829
Keywords :
Aerospace electronics; Breakdown voltage; Contracts; Electric breakdown; Fabrication; Gallium arsenide; Gunn devices; Laboratories; Lithography; MESFETs;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19704
Filename :
1480282
Link To Document :
بازگشت