A new high-sensitivity characterization method of interface stress at heterostructures by Cr-related luminescence

Author

Nishino, Taneo

Author_Institution

Dept. of Electr. Eng., Kobe Univ., Japan

Volume

25

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

1046

Lastpage

1052

Abstract

A high-sensitivity characterization method for the interface stress at semiconductor heterostructures which uses the characteristic Cr-related luminescence lines in GaAs crystal is discussed. This method permits characterization of the interface stress with high sensitivity, reflecting the high sensitivity of the Cr-related luminescence lines to the strain field around the Cr luminescent center. This method has been applied to semiconductor heterostructures of InGaPAs/GaAs, AlGaAs/GaAs, and ZnSSe/GaAs which were fabricated on a Cr-doped semi-insulating GaAs substrate.

Keywords

II-VI semiconductors; III-V semiconductors; aluminium compounds; chromium; gallium arsenide; gallium compounds; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor junctions; sulphur compounds; zinc compounds; AlGaAs-GaAs:Cr; GaAs:Cr; InGaPAs-GaAs:Cr; ZnSeS-GaAs:Cr; heterostructures; interface stress; luminescence lines; photoluminescence; semiconductor heterostructures; semiconductors; sensitivity; Chromium; Gallium arsenide; Heterojunctions; Lattices; Luminescence; Raman scattering; Semiconductor impurities; Spectroscopy; Stress; Substrates;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.27998

Filename

27998